### 摘要

A study of infrared absorption due to intersubband transitions in p-type Si
_{1-x}
Ge
_{x}
/Si quantum wells has been performed. The influence of the hole envelope wave-function and the subband structure on the absorption characteristics is evaluated. In the calculation, the subbands in a SiGe strained layer are computed by using a bond orbital model, which combines the k·p and the tight-binding methods, with a strain Hamiltonian. Both of the Poisson and the Schrödinger equations are solved self-consistently to take into account a band-bending effect. The calculated quantum efficiency in a 40 Å Si
_{0.75}
Ge
_{0.25}
/Si quantum well detector is compared favorably with an experimental result. The structural dependence of infrared absorption on quantum well width, doping and Ge content in a wavelength range of 3-15 μm is investigated. By varying a well width, our study reveals that a maximum absorption coefficient is obtained when the energy level of the excited-state subband is near the top of a quantum well.

原文 | English |
---|---|

頁（從 - 到） | 6646-6650 |

頁數 | 5 |

期刊 | Journal of Applied Physics |

卷 | 77 |

發行號 | 12 |

DOIs | |

出版狀態 | Published - 1 十二月 1995 |

## 指紋 深入研究「Calculation of the structural dependence of infrared absorption in p-type strained layer SiGe/Si quantum wells」主題。共同形成了獨特的指紋。

## 引用此

*Journal of Applied Physics*,

*77*(12), 6646-6650. https://doi.org/10.1063/1.359076