Bump resistance change behavior due to Cu-Sn IMCs formation with various solder diameters

Wan Lin Hsieh, Chung Kuang Lin, Chau Jie Zhan, Yu Wei Huang, Chih Chen*

*Corresponding author for this work

研究成果: Conference contribution

摘要

Theoretical calculation and simulation of FEM were proposed to explain the decline of change in resistance in Cu-Sn microbumps during the electromigration test. The IMC transformation from Cu 6 Sn 5 to Cu 3 Sn was supposed to be the reason. Being aware that the dimension keeps shrinking, the behavior for various solder diameters was also investigated.

原文English
主出版物標題Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面362-365
頁數4
ISBN(電子)9781479999286, 9781479999286
DOIs
出版狀態Published - 25 八月 2015
事件22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
持續時間: 29 六月 20152 七月 2015

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
國家Taiwan
城市Hsinchu
期間29/06/152/07/15

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  • 引用此

    Hsieh, W. L., Lin, C. K., Zhan, C. J., Huang, Y. W., & Chen, C. (2015). Bump resistance change behavior due to Cu-Sn IMCs formation with various solder diameters. 於 Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (頁 362-365). [7224407] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224407