BSIM6: Analog and RF compact model for bulk MOSFET

Yogesh Singh Chauhan*, Sriramkumar Venugopalan, Maria Anna Chalkiadaki, Muhammed Ahosan Ul Karim, Harshit Agarwal, Sourabh Khandelwal, Navid Paydavosi, Juan Pablo Duarte, Christian C. Enz, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article

69 引文 斯高帕斯(Scopus)

摘要

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node.

原文English
文章編號6632892
頁(從 - 到)234-244
頁數11
期刊IEEE Transactions on Electron Devices
61
發行號2
DOIs
出版狀態Published - 1 一月 2014

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    Chauhan, Y. S., Venugopalan, S., Chalkiadaki, M. A., Karim, M. A. U., Agarwal, H., Khandelwal, S., Paydavosi, N., Duarte, J. P., Enz, C. C., Niknejad, A. M., & Hu, C-M. (2014). BSIM6: Analog and RF compact model for bulk MOSFET. IEEE Transactions on Electron Devices, 61(2), 234-244. [6632892]. https://doi.org/10.1109/TED.2013.2283084