Gate dielectric leakage current becomes a serious concern as sub-20Å gate oxide prevails in advanced CMOS processes. Oxide this thin can conduct significant leakage current by various direct-tunneling mechanisms and degrade circuit performance. While the gate leakage current of MOS capacitors has been much studied, little has been reported on compact MOSFET modeling with gate leakage. In this work, an analytical intrinsic gate leakage model for MOSFET with physical source/drain current partition is developed. This model has been implemented in BSIM4.
|頁（從 - 到）||815-818|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 2000|
|事件||2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States|
持續時間: 10 十二月 2000 → 13 十二月 2000