Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction

R. D. Aburano*, Hawoong Hong, J. M. Roesler, K. Chung, D. S. Lin, P. Zschack, H. D. Chen, T. C. Chiang

*Corresponding author for this work

研究成果: Article

36 引文 斯高帕斯(Scopus)

摘要

Different Ag/Si(111) systems have been examined using synchrotron x-ray diffraction. Multi-atomic-layer deposition of Ag onto a Si(111)-(7×7) surface maintained at room temperature results in an unstrained, (111)-oriented film. The interface shows a Ag-modified (7×7) structure which when annealed above 200-250°C transforms to a (1×1) structure. Although this is near the characteristic temperature for formation of the (3 × 3) R30° surface reconstruction commonly observed for a monolayer of Ag adsorbed on Si(111), no evidence of this (3 × 3) R30° reconstruction was found at the interface. A Ag monolayer (3 × 3) R30° surface, further covered by multilayer Ag deposition at room temperature, also shows no indication of the (3 × 3) R30° reconstruction at the interface. This indicates that the actual interface structure may or may not be related to the clean or adsorbed layer structures. The structure of the Ag-Si interface was further characterized by scans of the crystal truncation rods. Both the (7×7) interface prepared by room-temperature deposition and the annealed (1×1) interface show fairly sharp boundaries. The results suggest some intermixing occurs at the monolayer level for the annealed interface. The structure of the Ag film was also investigated.

原文English
頁(從 - 到)1839-1847
頁數9
期刊Physical Review B
52
發行號3
DOIs
出版狀態Published - 1 一月 1995

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    Aburano, R. D., Hong, H., Roesler, J. M., Chung, K., Lin, D. S., Zschack, P., Chen, H. D., & Chiang, T. C. (1995). Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction. Physical Review B, 52(3), 1839-1847. https://doi.org/10.1103/PhysRevB.52.1839