Bottom electrode modification of ZrO 2 resistive switching memory device with Au nanodots

Dai Ying Lee, I. Chuan Yao, Tseung-Yuen Tseng*

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The resistive switching properties of the ZrO 2 memory devices with bottom electrode modification by using Au nanodots are investigated in this study. The regular arrays of Au nanodots are fabricated on Pt bottom electrode by nanosphere lithography. Due to the tip of the Au nanodots on the Pt bottom electrode, it causes the higher electric field within the ZrO 2 film above the nanodots due to reduced effective film thickness and induces the localized conducting filaments easily. The operation parameters' variation for switching devices is, therefore, suppressed with lower operation voltage and resistance ratio. Long retention time (>10 6 s) and stubborn nondestructive readout test (>10 4 s) at room temperature and 150 °C are also demonstrated in this device.

原文English
文章編號02BJ04
期刊Japanese Journal of Applied Physics
51
發行號2 PART 2
DOIs
出版狀態Published - 1 二月 2012

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