Boosting Ge-epi P-well mobility & crystal quality with Si or Sn implantation and melt annealing

John Borland, Shang Shuin Chaung, Tseung-Yuen Tseng, Abhijeet Joshi, Bulent Basol, Yao Jen Lee, Takashi Kuroi, Toshiyuki Tabata, Karim Huet, Gary Goodman, Nadya Khapochkina, Temel Buyuklimanli

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

We investigated the effects of Si, Sn and cluster-C implantation into both P-well and N-well doped regions of Ge-epi on Si wafers after laser annealing. XRD analysis shows improved Ge-epi crystallinity after >1.5J/cm2 laser melt annealing (liquid phase epitaxial regrowth) compared to sub-melt annealing (solid phase epitaxial regrowth). For the P-well case the Ge-epi Rs decreased to 1,600Q/d compared to Si at 3,4002/d suggesting a hole mobility increase of 2.1x from 150cm2/V-s to 315cmTV-s but actual measured Hall mobility was 650cm2/V-s to a depth of 60nm, an increase of 4.3x. The 1.8J/cm2 laser melt anneal with Si implant improved mobility uniformly to 700cm2/V-s to a depth of lOOnm while Sn implant improved mobility to 900cm2/V-s from the Ge-epi surface to a depth of 70nm then increases to 3000cm2/V-s at a depth of lOOnm. Measuring mobility depth profiles can be very critical in engineering surface and bulk mobility improvements which can be determined by chemical compositional changes in the Ge-epilayer especially for C where no liquid phase diffusion or movement could be detected.

原文English
主出版物標題ECS Transactions
編輯Jean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
發行者Electrochemical Society Inc.
頁面357-372
頁數16
版本7
ISBN(電子)9781607685395
DOIs
出版狀態Published - 1 一月 2018
事件8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
持續時間: 30 九月 20184 十月 2018

出版系列

名字ECS Transactions
號碼7
86
ISSN(列印)1938-6737
ISSN(電子)1938-5862

Conference

Conference8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
國家Mexico
城市Cancun
期間30/09/184/10/18

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