Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

Angada B. Sachid, Sourabh Khandelwal, Chen-Ming Hu

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

原文English
主出版物標題Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
發行者IEEE Computer Society
ISBN(列印)9781479922178
DOIs
出版狀態Published - 1 一月 2014
事件2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
持續時間: 28 四月 201430 四月 2014

出版系列

名字Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
國家Taiwan
城市Hsinchu
期間28/04/1430/04/14

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