Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications

Tsung Ming Tsai*, Kuan Chang Chang, Ting Chang Chang, Yong En Syu, Siang Lan Chuang, Geng Wei Chang, Guan Ru Liu, Min Chen Chen, Hui Chun Huang, Shih Kun Liu, Ya-Hsiang Tai, Der Shin Gan, Ya Liang Yang, Tai Fa Young, Bae Heng Tseng, Kai Huang Chen, Ming Jinn Tsai, Cong Ye, Hao Wang, Simon M. Sze

*Corresponding author for this work

研究成果: Article同行評審

46 引文 斯高帕斯(Scopus)

摘要

In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.

原文English
文章編號6334415
頁(從 - 到)1696-1698
頁數3
期刊IEEE Electron Device Letters
33
發行號12
DOIs
出版狀態Published - 25 十月 2012

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