Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation

Niraj Man Shrestha*, Chao Hsuan Chen, Zuo-Min Tsai, Yi-Ming Li, Jenn-Hawn Tarng, Seiji Samukawa

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.

原文English
主出版物標題Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
編輯Francesco Driussi
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728109404
DOIs
出版狀態Published - 九月 2019
事件24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
持續時間: 4 九月 20196 九月 2019

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
國家Italy
城市Udine
期間4/09/196/09/19

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