Back-end of line compatible transistors for hybrid CMOS applications

Po-Tsun Liu*, Po Yi Kuo, Chien Min Chang, Hsiu Hsuan Wei, Shih Tse Wu, Eric Sun

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

The low-temperature back-end of line (BEOL) compatible transparent amorphous oxide semiconductor (TAOS) TFTs and poly-Si TFTs are the suitable technology platform for three-dimensional (3D) integration hybrid CMOS technologies. The n-channel amorphous indium tungsten oxide (a-IWO) ultra-thin-film transistors (UTFTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO UTFTs with low operation voltages exhibit good electrical characteristics: near ideal subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (FE) ~ 25.3 cm2/V-s. In addition, we also have fabricated the p-channel poly-Si TFTs with high-κ gate insulator (GI). The matched electrical characteristics of n-channel and p-channel devices with low operation voltage and low IOFF are exhibiting the promising candidate for future hybrid CMOS applications.

原文English
主出版物標題2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
編輯Yue Kuo
發行者Electrochemical Society Inc.
頁面135-138
頁數4
版本1
ISBN(電子)9781607685395
DOIs
出版狀態Published - 1 一月 2019
事件7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 - Kyoto, Japan
持續時間: 19 五月 201923 五月 2019

出版系列

名字ECS Transactions
號碼1
90
ISSN(列印)1938-6737
ISSN(電子)1938-5862

Conference

Conference7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
國家Japan
城市Kyoto
期間19/05/1923/05/19

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