Back-channel etched double layer in-W-O/In-W-Zn-O thin-film transistors

Zhcn Hao Li, Po Yi Kuo, Wen Tzu Chen, Po-Tsun Liu

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The thin-film transistors (TFTs) with back-channel etched (BCE) type enable channel length to be narrow and reduce parasitic capacitances owing to its shorter overlaps between the gate and source/drain (S/D) electrodes. In this study, a high-performance BCE-type oxide thin-film transistor was proposed for investigation. A novel stacked double layer ln-W-0 (IWO)/In-W-Zn-0 (1WZO) channel structure was fabricated and developed. Respectively, IWZO exhibits a high resistance to back-channel etching damage and IWO channel achieve a high mobility. The double layer IWO/1WZO TFTs are promising candidates for driving active matrix organic light-emitting diode (AMOLED) and high resolution display applications in the future. The double layer IWO/IWZO TFTs with S/D pattern by H2O2 + KOH can exhibit the high-performance electrical characteristic. The field-effect mobility (pre)-21.1cm2/V-s. Subthreshold swing (S.S.)-0.15 V/dec, threshold voltage (Vth) ∼-0.092 V, and on/off ratio-4.88xl08 can be achieved.

原文English
主出版物標題ECS Transactions
編輯Yue Kuo
發行者Electrochemical Society Inc.
頁面111-114
頁數4
86
版本11
ISBN(電子)9781607685395
DOIs
出版狀態Published - 1 一月 2018
事件Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
持續時間: 30 九月 20184 十月 2018

出版系列

名字ECS Transactions
號碼11
86
ISSN(列印)1938-6737
ISSN(電子)1938-5862

Conference

ConferenceSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
國家Mexico
城市Cancun
期間30/09/184/10/18

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