Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

We have fabricated the TaN-[SiO2-LaAlO3]- HfONLaAlO3-SiO2 Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 °C, and a 5.5-V endurance window at 10-6 cycles were measured under very fast 100- μs and low 16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.

原文English
文章編號5699333
頁(從 - 到)381-383
頁數3
期刊IEEE Electron Device Letters
32
發行號3
DOIs
出版狀態Published - 1 三月 2011

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