Hard X-ray photoemission spectroscopy experiments are attractive because they can probe more deeply. The paper reviews two topics on the non-destructive characterization of high-κ/high-μ gate stacks using hard X-ray (hν = 7.94 keV) photoemission spectroscopy. The first topic is the change in the compositional depth profiles and the chemical bonding states of HfO 2/Si-cap/strained-Ge/Si0.5Ge0.5/Si(1 0 0) laminating structures. The second topic is the influence of various surface treatments (HF, (NH4)2S and HMDS treatments) and La 2O3 interlayer insertion on the chemical bonding states at high-κ/In0.53Ga0.47As interface.
|頁（從 - 到）||295-301|
|期刊||Journal of Electron Spectroscopy and Related Phenomena|
|出版狀態||Published - 十月 2013|