Approaches and options for modeling sub-0.1 μm CMOS devices

Mansun Chan, Xuemei Xi, Jin He, Chen-Ming Hu

研究成果: Conference contribution同行評審

摘要

This paper attempts to provide a general guideline to develop a practical model for MOSFETs in the sub 0,1 μm generations. It starts by giving an overview of the different modeling approaches and options including charge based approach, surface potential based approach, and conductance based approach. Their relative advantages and weaknesses will be discussed. The evolution of the BSIM models from its first generation to the most recent release will be used as an example for the development of a practical device model. It will be followed by a discussion on how the accelerated technology development may impact the traditional modeling approaches. A new paradigm to incorporate modem software engineering methodology to shorten model development cycle will be presented.

原文English
主出版物標題Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
發行者Institute of Electrical and Electronics Engineers Inc.
頁面79-82
頁數4
ISBN(電子)0780374290
DOIs
出版狀態Published - 1 一月 2002
事件9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong, China
持續時間: 22 六月 2002 → …

出版系列

名字Proceedings of the IEEE Hong Kong Electron Devices Meeting
2002-January

Conference

Conference9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
國家China
城市Hong Kong
期間22/06/02 → …

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