Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

Chih Tsung Tsai, Ting Chang Chang*, Po-Tsun Liu, Yi Li Cheng, Kon Tsu Kin, Fon Shan Huang

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

原文English
頁(從 - 到)H35-H37
頁數3
期刊Electrochemical and Solid-State Letters
12
發行號2
DOIs
出版狀態Published - 1 一月 2009

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