Application of secondary electron potential contrast on junction leakage isolation

Po-Tsun Liu*, Jeng Han Lee, Y. S. Huan, David Su

*Corresponding author for this work

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

Secondary electron potential contrast (SEPC) technology with an in situ dynamic trigger was studied to inspect P + /N-well junction leakage arising from P-well misalignment in a static random access memory cell. Combining SEPC with scanning electron microscopy observations allows direct identification of the junction shift. Furthermore, an in situ negative bias applied to the P-well can create a wider depletion region and eliminate the leakage path in P + /N-well contacts, allowing the P + /N well to operate normally. This proposed in situ dynamic trigger method is a promising and effective approach to investigating device physics under a dynamic scope.

原文English
文章編號122105
期刊Applied Physics Letters
95
發行號12
DOIs
出版狀態Published - 12 十月 2009

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