The nonuniformity of the induced leakage current in metal oxide semiconductor (MOS) capacitors has been investigated in an electron cyclotron resonance (ECR) system. For plasma-etched MOS capacitors with 5-nm-thick oxides, it is found that the leakage currents induced by plasma etching increase with increasing overetching time. However, additional Ebd (breakdown field) degradation is not obvious as overetching percentage increases from 10% to 50%. A mechanism based on the antenna charging effect has been proposed to explain the Ebd electrical characteristics. In accordance with the mechanism, the Ebd degradation has been significantly reduced by first etching off a narrow peripheral edge around the gate pattern.
|頁（從 - 到）||578-583|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|發行號||2 PART A|
|出版狀態||Published - 1 二月 1996|