Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching

Tzong Kuei Kang*, Shih Yuan Ueng, Bau Tong Dai, Liang Po Chen, Huang-Chung Cheng

*Corresponding author for this work

研究成果: Article同行評審

摘要

The nonuniformity of the induced leakage current in metal oxide semiconductor (MOS) capacitors has been investigated in an electron cyclotron resonance (ECR) system. For plasma-etched MOS capacitors with 5-nm-thick oxides, it is found that the leakage currents induced by plasma etching increase with increasing overetching time. However, additional Ebd (breakdown field) degradation is not obvious as overetching percentage increases from 10% to 50%. A mechanism based on the antenna charging effect has been proposed to explain the Ebd electrical characteristics. In accordance with the mechanism, the Ebd degradation has been significantly reduced by first etching off a narrow peripheral edge around the gate pattern.

原文English
頁(從 - 到)578-583
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
發行號2 PART A
DOIs
出版狀態Published - 1 二月 1996

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