Anomalous selective tungsten growth by chemical vapor deposition

Yu Jane Mei*, Ting Chang Chang, Jeng Dong Sheu, Wen Kuan Yeh, Fu-Ming Pan, Chun Yen Chang

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

Selective tungsten chemical vapor deposition (W-CVD) is one of the most attractive technique for filling deep submicron contact hole and via hole for the ULSI application. In this work, we firstly find out the anomalous selective W growth for the contact hole. The tungsten only nucleates from the side ring of the contact hole bottom. Several predeposition treatments prior to W growth can improve this anomalous feature and excellently selective W growth can be achieved. Auger electron spectroscopy (AES) is utilized to investigate the interface of Si/W. A model has been proposed to explain this anomalous selective tungsten growth.

原文English
頁(從 - 到)399-405
頁數7
期刊Materials Research Society Symposium - Proceedings
427
DOIs
出版狀態Published - 1 十二月 1996
事件Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
持續時間: 8 四月 199611 四月 1996

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