Analytical quantum-confinement model for short-channel gate-all-around MOSFETs under subthreshold region

Yu Sheng Wu*, Pin Su

*Corresponding author for this work

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.

原文English
頁(從 - 到)2720-2725
頁數6
期刊IEEE Transactions on Electron Devices
56
發行號11
DOIs
出版狀態Published - 9 十月 2009

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