Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2

Kazuo Tsutsui*, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The annealing conditions causing an irregular peak in sheet resistance of nickel silicides are investigated. It is found that the irregular rise in sheet resistance occurs at a critical temperature of 750-775 °C as a result of agglomeration related to phase transition from NiSi to NiSi2. Experiments on the effect of temperature, heating rate and annealing duration in rapid thermal annealing revealed that the high-resistance state produced by annealing at the critical temperature could not be changed by subsequent annealing at higher temperature, and that the high-resistance state required 30-40 s at the critical temperature to form. Pre-annealing at 600 °C was found to suppress the later formation of the high-resistance state.

原文English
頁(從 - 到)315-319
頁數5
期刊Microelectronic Engineering
85
發行號2
DOIs
出版狀態Published - 二月 2008

指紋 深入研究「Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi<sub>2</sub>」主題。共同形成了獨特的指紋。

引用此