Analysis and design of the 0.13-μm CMOS shunt-series series-shunt dual-feedback amplifier

Tzung Han Wu; Jin Siang Syu; Chin-Chun Meng

doi:10.1109/TCSI.2009.2015603

Analysis and design of the 0.13-μm CMOS shunt-series series-shunt dual-feedback amplifier

Tzung Han Wu^*, Jin Siang Syu, Chin-Chun Meng

^*Corresponding author for this work

電機工程學系

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

This paper demonstrates the design methodology of the shuntseries seriesshunt dual-feedback Meyer wideband amplifier. The small-signal S-parameters are obtained for the first time using the pole-and-zero analysis, thus giving the RF designers a detailed insight into the Meyer amplifier. A 10-GHz wideband amplifier is demonstrated in this paper, using 0.13-μm CMOS technology to verify our design theory. The experimental results of the S-parameters highly agree with our theory.

原文	English
文章編號	4785193
頁（從 - 到）	2373-2383
頁數	11
期刊	IEEE Transactions on Circuits and Systems I: Regular Papers
卷	56
發行號	11
DOIs	https://doi.org/10.1109/TCSI.2009.2015603
出版狀態	Published - 1 十二月 2009

存取文件

10.1109/TCSI.2009.2015603

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引用此

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