Analysis and design of the 0.13-μm CMOS shunt-series series-shunt dual-feedback amplifier

Tzung Han Wu*, Jin Siang Syu, Chin-Chun Meng

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

This paper demonstrates the design methodology of the shuntseries seriesshunt dual-feedback Meyer wideband amplifier. The small-signal S-parameters are obtained for the first time using the pole-and-zero analysis, thus giving the RF designers a detailed insight into the Meyer amplifier. A 10-GHz wideband amplifier is demonstrated in this paper, using 0.13-μm CMOS technology to verify our design theory. The experimental results of the S-parameters highly agree with our theory.

原文English
文章編號4785193
頁(從 - 到)2373-2383
頁數11
期刊IEEE Transactions on Circuits and Systems I: Regular Papers
56
發行號11
DOIs
出版狀態Published - 1 十二月 2009

指紋 深入研究「Analysis and design of the 0.13-μm CMOS shunt-series series-shunt dual-feedback amplifier」主題。共同形成了獨特的指紋。

引用此