An oxide-buffered BE-MANOS charge-trapping device and the role of Al 2O3

Sheng Chih Lai*, Hang Ting Lue, Chien Wei Liao, Yu Fong Huang, Ming Jui Yang, Yi Hsien Lue, Tai Bor Wu, Jung Yu Hsieh, Szu Yu Wang, Shih Ping Hong, Fang Hao Hsu, Chih Yen Shen, Guang Li Luo, Chao-Hsin Chien, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

*Corresponding author for this work

研究成果: Conference contribution同行評審

12 引文 斯高帕斯(Scopus)

摘要

The role of Al2O3 in MANOS device is critically examined, and we conclude that its primary function is to reduce gate injection during erase operation. By itself, Al2O3 cannot stop charge leakage from the charge-trapping nitride layer. Furthermore, Al 2O3 provides no magic during the erase operation, and MANOS erases very slowly through charge de-trapping. BE-SONOS [1], with the band engineered ONO tunneling layers, provides efficient channel hole injection for erase. BE-MANOS [2] should be an ideal combination with fast erase and good reliability. However, it shows poor data retention. By inserting a SiO 2 buffer layer between Al2O3 and the SiN storage layer, the oxide-buffered BE-MANOS shows good performance and good reliability. The EOT scalability is also investigated.

原文English
主出版物標題2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD
頁面101-102
頁數2
DOIs
出版狀態Published - 1 九月 2008
事件2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD - Opio, France
持續時間: 18 五月 200822 五月 2008

出版系列

名字2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Conference

Conference2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD
國家France
城市Opio
期間18/05/0822/05/08

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