An investigation of scanning capacitance microscopy on iron-contaminated p-type silicon

M. N. Chang*, T. Y. Chang, Fu-Ming Pan, B. W. Wu, T. F. Lei

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Scanning capacitance microscopy (SCM) is employed to examine iron-contaminated p-type Si samples. For slightly contaminated samples, a dc voltage of -0.8 V, applied between the sample and the conductive tip, induces positive trapped charges. Owing to the existence of these charges, the region containing trapped charges exhibits an obviously low dC/dV signal. According to contact-mode atomic force microscopy results, the surface morphology has little effect on the SCM signal. The experimental results indicate that SCM is capable of detecting the distribution of oxidation-related defects which cannot otherwise be easily observed by atomic force microscopy and transmission electron microscopy.

原文English
期刊Electrochemical and Solid-State Letters
4
發行號9
DOIs
出版狀態Published - 1 九月 2001

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