An improved EEHEMT RF noise model for 0.25 μm InGaP pHEMT transistor using Verilog-A language

An Sam Peng, Lin-Kun Wu

研究成果: Article同行評審

摘要

In this paper, an accurate experimental noise model to improve the EEHEMT nonlinear model using the Verilog-A language in Agilent ADS is presented for the first time. The present EEHEMT model adopts channel noise to model the noise behavior of pseudomorphic high electron mobility transistor (pHEMT). To enhance the accuracy of the EEHEMT noise model, we add two extra noise sources: gate shot noise and induced gate noise current. Here we demonstrate the power spectral density of the channel noise Sid and gate noise Sig versus gate-source voltage for 0.25 μm pHEMT devices. Additionally, the related noise source parameters, i.e., P, R, and C are presented. Finally, we compare four noise parameters between the simulation and model, and the agreement between the measurement and simulation results shows that this proposed approach is dependable and accurate.

原文English
頁(從 - 到)424-429
頁數6
期刊IEICE Transactions on Electronics
E100C
發行號5
DOIs
出版狀態Published - 1 五月 2017

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