An Extreme Surface Proximity Push for Embedded SiGe in pMOSFETs Featuring Self-Aligned Silicon Reflow

Da Wen Lin, Chien Cheng Liang, Ming-Jer Chen, Chung-Cheng Wu

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

This letter proposes a novel process to modulate the distance, or proximity, between the tip of embedded silicon-germanium (e-SiGe) and the channel region in pMOSFETs. Traditionally, sophisticated etching treatment is adopted in a spacer structure; however, process-induced variation in the e-SiGe proximity may lead to serious variation in pMOSFET performance. In this letter, an extremely close proximity is achieved using self-aligned silicon reflow (SASR) in hydrogen ambient. As opposed to conventional approaches which have e-SiGe proximity determined by spacer width, the tip of e-SiGe with SASR can be positioned flush with the gate edge, as corroborated by both the TEM analyses and TCAD simulation. A significant improvement in pMOSFET performance is also measured.
原文English
頁(從 - 到)924-926
頁數3
期刊IEEE Electron Device Letters
DOIs
出版狀態Published - 九月 2010

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