An energy-efficient and high-speed mobile memory I/O interface using simultaneous Bi-directional dual (base+RF)-band signaling

Gyung Su Byun*, Yanghyo Kim, Jongsun Kim, Sai Wang Tam, Mau-Chung Chang

*Corresponding author for this work

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

A fully-integrated 8.4 Gb/s 2.5 pJ/b mobile memory I/O transceiver using simultaneous bidirectionaldual band signaling is presented. Incorporating both RF-band and baseband transceiver designs, this prototype demonstrates an energy-efficient and high-bandwidth solution for future mobile memory I/O interface. The proposed amplitude shift keying (ASK) modulator/demodulator with on-chip band-selective transformer obviates a power hungry pre-emphasis and equalization circuitry, revealing a low-power, compact and standard mobile memory-compatible solution. Designed and fabricated in 65-nm CMOS technology, each RF-band and baseband transceiver consumes 10.5 mW and 11 mW and occupies 0.08 mm 2 and 0.06 mm 2 die area, respectively. The dual-band transceiver achieves error-free operation (BER < 10 -15 ) with 2 23-1 PRBS at 8.4 Gb/s over a distance of 10 cm.

原文English
文章編號6025221
頁(從 - 到)117-130
頁數14
期刊IEEE Journal of Solid-State Circuits
47
發行號1
DOIs
出版狀態Published - 1 一月 2012

指紋 深入研究「An energy-efficient and high-speed mobile memory I/O interface using simultaneous Bi-directional dual (base+RF)-band signaling」主題。共同形成了獨特的指紋。

引用此