An effective one-trap-level CAD model for the general SOC integration platform - Particle-Beam Stand (PBS) - When modeling proton-caused local semi-insulating regions

Chungpin Liao*, T. S. Duh, T. N. Yang, S. M. Lan, Chih-Wei Liu, T. T. Yang, J. S. Hsu, H. Y. Shao

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

A π technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling, However, up to this day the physics behind this proton-caused defect phase is never clear. An effective 1-level defect model is constructed using experimental results and existing single-trap-level theory and TRIM (or SRIM) code-simulated parameters. The found effective single trap level (ET) is at about +0.24 eV in n-Si and at -0.34 eV in p-Si, measuring from the center of the energy band-gap.

原文English
主出版物標題2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
頁面166-169
頁數4
DOIs
出版狀態Published - 1 十二月 2004
事件2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW - , Taiwan
持續時間: 9 九月 200410 九月 2004

出版系列

名字2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

Conference

Conference2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
國家Taiwan
期間9/09/0410/09/04

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