An Analytical Threshold-Voltage Model of Trench-Isolated MOS Devices with Nonuniformly Doped Substrates

Steve S. Chung

研究成果: Article

35 引文 斯高帕斯(Scopus)

摘要

A simple closed-form expression of the threshold voltage is developed for Trench-Isolated MOS(TIMOS) devices with feature size down to the deep-submicrometer range. The analytical expression is the first developed to include the nonuniform doping effect of a narrow-gate-width device. The inverse narrow width effect can be predicted analytically from the proposed model. It was derived by modeling the gate sidewall capacitance to include the two-dimensional field-induced edge fringing effect and solving the Poisson equation to include the channel implant effect at different operating backgate biases. A two-dimensional simulation program was also developed, and the simulated data were used for verification of the analytical model. Good agreements between the modeled and simulated data have been achieved for a wide range of gate widths and biases. The model is well suited for the design of the basic transistor cell in DRAM circuits using trench field oxide isolation structure.

原文English
頁(從 - 到)614-622
頁數9
期刊IEEE Transactions on Electron Devices
39
發行號3
DOIs
出版狀態Published - 1 一月 1992

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