An alternative process for silicon nanowire fabrication with SPL and wet etching system

Kow-Ming Chang*, K. S. You, J. H. Lin, Jeng-Tzong Sheu

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Silicon nanowire fabrication of nanoscale dimensions on a single-crystal silicon surface by scanning probe lithography (SPL) and potassium hydroxide (KOH) aqueous wet etching system has proven to be adequate technological processes. Using SPL directly to define patterns on a single-crystal silicon surface showed that the linewidth of ∼50 nm can be further shrunk to ∼20 nm with KOH wet etching and orientation-dependent etching (ODE) processes on (110)-oriented silicon samples. In addition, this lithography technique also showed a great ability to define patterns on fluorocarbon mask layers. This method performed the fine linewidth of silicon nanowires around 20 nm by operating with lower applied voltages and higher scanning speeds (shorter exposure time) with SPL and ODE techniques and KOH wet etching on (100)-oriented silicon samples. These alternative processes provide the capability to fabricate nanoscale structures with high reliability and repeatability for applications in the nanofields.

原文English
頁(從 - 到)G679-G682
頁數4
期刊Journal of the Electrochemical Society
151
發行號10
DOIs
出版狀態Published - 26 十一月 2004

指紋 深入研究「An alternative process for silicon nanowire fabrication with SPL and wet etching system」主題。共同形成了獨特的指紋。

引用此