An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask

Kun Ching Shen*, Wen Yu Lin, Dong Sing Wuu, Shih Yung Huang, Kuo Sheng Wen, Shih Feng Pai, Liang Wen Wu, Ray-Hua Horng

*Corresponding author for this work

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

We demonstrate here a 380-nm ultraviolet InGaN flip-chip (FC) light-emitting diode (LED) with self-textured oxide mask (STOM-FCLED) structures fabricated in a large-area (1125 × 1125μm 2 ) FC configuration. An 83% enhancement in the external quantum efficiency was achieved for the STOM-FCLEDs when compared with FCLEDs without the STOM structure operating at an injection current of 350 mA. For STOM-FCLEDs operating at an injection current of 1000 mA, a light output of approximately 400 mW was obtained. These results could be attributed to the introduction of the STOM structure, which not only reduces the density of threading dislocation but also intensifies the LED light extraction.

原文English
文章編號6400284
頁(從 - 到)274-276
頁數3
期刊IEEE Electron Device Letters
34
發行號2
DOIs
出版狀態Published - 7 一月 2013

指紋 深入研究「An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask」主題。共同形成了獨特的指紋。

引用此