Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO:N bilayer stack channel layers

Po-Tsun Liu*, Yi Teh Chou, Li Feng Teng, Fu Hai Li, Chur Shyang Fuh, Han Ping D. Shieh

*Corresponding author for this work

研究成果: Article同行評審

42 引文 斯高帕斯(Scopus)

摘要

A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

原文English
文章編號5995139
頁(從 - 到)1397-1399
頁數3
期刊IEEE Electron Device Letters
32
發行號10
DOIs
出版狀態Published - 1 十月 2011

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