Alternating Layer and Island Growth of Pb on Si by Spontaneous Quantum Phase Separation

Hawoong Hong, C. M. Wei, M. Y. Chou, Z. Wu, L. Basile, Haydn Chen, M. Holt, T. C. Chiang

研究成果: Article同行評審

72 引文 斯高帕斯(Scopus)

摘要

Real-time in situ x-ray studies of continuous Pb deposition on [Formula presented] at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

原文English
文章編號076104
頁(從 - 到)1-4
頁數4
期刊Physical Review Letters
90
發行號7
DOIs
出版狀態Published - 21 二月 2003

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