Alpha-Particle-Induced Field and Enhanced Collection of Carriers

Chen-Ming Hu*

*Corresponding author for this work

研究成果: Article同行評審

136 引文 斯高帕斯(Scopus)

摘要

A simple physical model explains all the characteristics of the newly discovered funnelling phenomenon. An alpha strike results in significant field in the quasi-neutral regions to a depth that is equal to 1 + μn/μp times the depletion region width of an n+/p junction. This and the predicted current waveform agree with experiments and simulation results. The model also predicts the effects of the angle of alpha incidence, and that p+/n junctions should exhibit weaker funnelling phenomenon.

原文English
頁(從 - 到)31-34
頁數4
期刊IEEE Electron Device Letters
3
發行號2
DOIs
出版狀態Published - 1 一月 1982

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