AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

M. H. Lo, Z. Y. Li, J. R. Chen, T. S. Ko, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang

研究成果: Conference contribution同行評審

摘要

A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.

原文English
主出版物標題Gallium Nitride Materials and Devices III
DOIs
出版狀態Published - 23 四月 2008
事件Society of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States
持續時間: 21 一月 200824 一月 2008

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6894
ISSN(列印)0277-786X

Conference

ConferenceSociety of Photo-Optical Instrumentation Engineers (SPIE)
國家United States
城市San Jose, CA
期間21/01/0824/01/08

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