AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier

Y. F. Chen, Y. C. Lee, S. C. Huang, Kai-Feng Huang, Yung-Fu Chen*

*Corresponding author for this work

研究成果: Article同行評審

摘要

An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 μm. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.

原文English
頁(從 - 到)57-62
頁數6
期刊Applied Physics B: Lasers and Optics
106
發行號1
DOIs
出版狀態Published - 1 一月 2012

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