AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy

M. J. Jurkovic*, J. Alperin, Q. Du, W. I. Wang, Mau-Chung Chang

*Corresponding author for this work

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

AlGaAs/GaAs Npn heterojunction bipolar transistors have been grown by molecular beam epitaxy on Si (311) substrates utilizing a GaAs buffer layer as thin as 2 μm and fabricated using a self-aligned base contact process. Reflection high-energy electron diffraction patterns correspond with antiphase domain-free growth. Direct current measurements for a 70×70 μm2 device reveal a small-signal common-emitter current gain of 10 and collector-emitter breakdown of 13 V at a collector current of 1.8 kA/cm2. These results indicate that further optimization in growth technique may render the growth of GaAs-on-Si (311) a viable candidate for application in high-power integration.

原文English
頁(從 - 到)1401-1403
頁數3
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16
發行號3
DOIs
出版狀態Published - 1 五月 1998

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