Al x Ga 1-x N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

W. S. Chen, S. J. Chang*, Y. K. Su, R. L. Wang, Cheng-Huang Kuo, S. C. Shei

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

指紋 深入研究「Al <sub>x</sub> Ga <sub>1-x</sub> N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy