Al x Ga 1-x N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

W. S. Chen, S. J. Chang*, Y. K. Su, R. L. Wang, Cheng-Huang Kuo, S. C. Shei

*Corresponding author for this work

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

Al x Ga 1-x N/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped Al x Ga 1-x N spacer layer and a 14-nm-thick Si-doped Al x Ga 1- x N layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation I DS were 207, 270, 430, and 355 mA/mm while the maximum g m were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.

原文English
頁(從 - 到)398-403
頁數6
期刊Journal of Crystal Growth
275
發行號3-4
DOIs
出版狀態Published - 1 三月 2005

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