Al 2 O 3 -Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

D. S. Yu*, C. H. Huang, Albert Chin, Chunxiang Zhu, M. F. Li, Byung Jin Cho, Dim Lee Kwong

*Corresponding author for this work

研究成果: Article › 同行評審

59 引文 斯高帕斯（Scopus）

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Chemical Compounds

Engineering & Materials Science