Al 2 O 3 -Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

D. S. Yu*, C. H. Huang, Albert Chin, Chunxiang Zhu, M. F. Li, Byung Jin Cho, Dim Lee Kwong

*Corresponding author for this work

研究成果: Article同行評審

59 引文 斯高帕斯(Scopus)

摘要

High-κ Al 2 O 3 /Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 2 O 3 -GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al 2 O 3 -Si MOSFETs. Additionally, A1 2 O 3 -GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al 2 O 3 -Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs.

原文English
頁(從 - 到)138-140
頁數3
期刊IEEE Electron Device Letters
25
發行號3
DOIs
出版狀態Published - 1 三月 2004

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