AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

G. J. Sullivan, P. M. Asbeck, Mau-Chung Chang, D. L. Miller, K. C. Wang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.

原文English
頁(從 - 到)419-421
頁數3
期刊Electronics Letters
22
發行號8
DOIs
出版狀態Published - 1 一月 1986

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