Low noise high-frequency analog operation of small geometry silicon MOSFETs are demonstrated. By scaling gate length down to 0.3 - sub 0.1 μm regions, excellent low noise figure of 1.5 dB at 2 GHz was obtained with low drain current of 0.3 mA/μm at fT value of 20 - 65 GHz - the same level of today's high performance silicon bipolar transistors in research level. Even at low voltage operation such as 0.5 V, extremely high cutoff frequency of 48 GHz was realized by sub 0.1 μm gate length nMOSFETs. Such low voltage operations allow one order of magnitude smaller power consumption compare with 2V power supply voltage.
|頁（從 - 到）||71-72|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1995|
|事件||Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn|
持續時間: 6 六月 1995 → 8 六月 1995