Achieving Ultra-long GaN Nanorod Growth by Lowering Nucleation Energy Via Surface Modification for Optical Sensors

Chang-Hsun Huang, Yi-Chia Chou*

*Corresponding author for this work

研究成果: Article同行評審

摘要

We introduce a pit-formation method on a GaN substrate to obtain ultra-long GaN nanorods (NRs) grown homoepitaxially through hydride vapor phase epitaxy (HVPE) without an additional catalyst or a complex lithography procedure. The pits were created by annealing and nitridation at a high temperature on the GaN substrate; thus, GaN NRs were pinned at the pits during growth processes. The nucleation barrier of the GaN NR can be lowered by creating pits on the GaN substrate, leading to a higher possibility of triggering NR growth at a higher growth temperature. The conditions of the growth temperature were found to critically influence the NR aspect ratio and height. The GaN NRs with c-orientation achieves an similar to 11.2 mu m height in average in 20 min where the maximum height reaches 12.7 mu m. The possible diffusion pathway of Ga adatoms was also discussed to reach the maximum height of a GaN NR at various growth temperatures. In addition, room-temperature cathodoluminescence measurements on the GaN NRs show a GaN-related near band gap emission peak and the luminescence intensity is even better than that of the GaN substrate. Such ultra-long GaN nanorods with the optical properties can be evaluated for sensing materials.

原文English
頁(從 - 到)8949-8957
頁數9
期刊ACS Applied Nano Materials
3
發行號9
DOIs
出版狀態Published - 25 九月 2020

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