Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

Hsiao-Wen Zan*, Chun Cheng Yeh, Hsin-Fei Meng, Chuang Chuang Tsai, Liang Hao Chen

*Corresponding author for this work

研究成果: Article

97 引文 斯高帕斯(Scopus)

摘要

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

原文English
頁(從 - 到)3509-3514
頁數6
期刊Advanced Materials
24
發行號26
DOIs
出版狀態Published - 10 七月 2012

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