The thickness of a heavily boron-doped layer with doping density over 8 × 1019 cm-3 was determined experimentally by calculating the height of the boron etch-stop layer of silicon after completion of silicon backside etching in KOH. P+ layers with thickness from 2 μm to 5 μm were fabricated on the silicon wafers by solid boron nitride source diffusion at 1125°C for 1 to 6 hours. The measured results of layer thickness show a strong agreement with the theoretical calculations based on a universal profile of the heavily boron-doped layer.
|頁（從 - 到）||107-111|
|期刊||Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an|
|出版狀態||Published - 1 五月 1998|