Accelerated testing of SiC>2 reliability

Elyse Rosenbaum*, Joseph C. King, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article同行評審

54 引文 斯高帕斯(Scopus)

摘要

-This paper compares several popular accelerated test methods for projecting SiU2 lifetime distribution or failure rate: constant-voltage and constant-current time-to-breakdown and charge-to-breakdown tests, ramp-voltage breakdown test, and ramp-current charge-to-breakdown test. Charge trapping affects the electric field acceleration parameter for time-to-breakdown and the value of breakdown voltage. Practical considerations favor ramp breakdown testing for gate oxide defect characterization. The effective thinning model is used for defect characterization and the ramp-voltage breakdown test is shown to be superior to the ramp-current QBD test for extraction of the defect distribution. Measurement issues are also discussed.

原文English
頁(從 - 到)70-80
頁數11
期刊IEEE Transactions on Electron Devices
43
發行號1
DOIs
出版狀態Published - 1 十二月 1996

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