Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors

Yu Ching Tsao, Ting Chang Chang*, Hua Mao Chen, Bo Wei Chen, Hsiao Cheng Chiang, Guan Fu Chen, Yu Chieh Chien, Ya-Hsiang Tai, Yu Ju Hung, Shin Ping Huang, Chung Yi Yang, Wu-Ching Chou

*Corresponding author for this work

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO 4 ) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software.

原文English
文章編號023501
期刊Applied Physics Letters
110
發行號2
DOIs
出版狀態Published - 9 一月 2017

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