A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire

P. Ravadgar*, Ray-Hua Horng, S. L. Ou

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A clear visualization of the origin and characteristics of threading dislocations (TDs) of GaN-based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried out. Special experimental set up and chemical etchant along with field emission scanning electron microscopy are employed to study the dynamics of GaN TDs at different growth stages. Cross-sectional transmission electron microscopy analysis visualized the formation of edge TDs is arising from extension of coalescences at boundaries of different tilting-twining nucleation grains mosaic growth. Etch pits as representatives of edge TDs are in agreement with previous theoretical models and analyses of TDs core position and characteristics.

原文English
文章編號231911
期刊Applied Physics Letters
101
發行號23
DOIs
出版狀態Published - 3 十二月 2012

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