A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect

Pragya Kushwaha, Harshit Agarwal, Chetan Kumar Dabhi, Yen Kai Lin, J. P. Duarte, Chen-Ming Hu, Yogesh Singh Chauhan

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations.

原文English
主出版物標題2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781538611128
DOIs
出版狀態Published - 4 十月 2018
事件2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018 - Bangalore, India
持續時間: 16 三月 201817 三月 2018

出版系列

名字2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018

Conference

Conference2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018
國家India
城市Bangalore
期間16/03/1817/03/18

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